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MSC1300M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC1300M is a high power Class C, common Base transistor, Designed for IFF/DME/TACAN Applications.
PACKAGE STYLE .400 2NL FLG
A .0 2 5 x 4 5 2X B C F OD E 4 x .0 6 2 x 4 5
FEATURES:
* Internal Input/Output Matching Networks * PG = 6.3 dB at 300 W/1090 MHz * OmnigoldTM Metalization System
D IM A
G H I J K P M M IN IM U M
inches / m m
L
N
M A X IM U M
inches / m m
.0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0
.0 3 0 / 0 .7 6
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG JC 20 A 55 V 625 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 0.20 C/W
B C D E F G H I J K L M N P
.3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4
.6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVEBO ICES hFE GP C IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V
TC = 25 C
NONETEST CONDITIONS
RBE = 10
MINIMUM TYPICAL MAXIMUM
65 65 3.5 25
UNITS
v V V mA --dB %
IC = 1.0 A POUT = 300 W f = 1090 MHz
15 6.3 35 6.7 42
120
Pulse Width = 10 sec, Duty Cycle 10 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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